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Philips Semiconductors
Full bridge driver IC
Product speci?cation
UBA2032
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are measured with respect to
SGND; positive currents ?ow into the IC.
SYMBOL
V DD
V HV
V FSL
V FSR
V SHL
V SHR
V PGND
PARAMETER
supply voltage (low voltage)
supply voltage (high voltage)
?oating supply voltage left
?oating supply voltage right
source voltage for higher left
MOSFETs
source voltage for higher right
MOSFETs
power ground voltage
CONDITIONS
DC value
transient at t < 0.1 μ s
V SHL = V SHR = 550 V
V SHL = V SHR = 0 V
V SHL = V SHR = 550 V
V SHL = V SHR = 0 V
with respect to PGND and SGND
with respect to SGND; t < 1 μ s
with respect to PGND and SGND
with respect to SGND; t < 1 μ s
with respect to SGND
MIN.
0
0
0
0
0
0
0
? 3
? 14
? 3
? 14
0
MAX.
14
17
550
564
14
564
14
+550
?
+550
?
5
V
V
V
V
V
V
V
V
V
V
V
V
UNIT
V ? LVS
negative supply voltage for logic input t < 1 s
0
464
V
V +LVS
V i(EXTDR)
positive supply voltage for logic input
input voltage from external oscillator
V HV = 450 V; t < 1 s
V HV = 0 V; DC value
V HV = 0 V; transient at t < 0.1 μ s
with respect to V ? LVS
0
0
0
0
464
14
17
V +LVS
V
V
V
V
on pin EXTDR
V i(RC)
V i(SU)
V i(BD)
V i(DD)
SR
T j
T amb
T stg
V esd
input voltage on pin RC
input voltage on pin SU
input voltage on pin BD
input voltage on pin DD
slew rate at output pins
junction temperature
ambient temperature
storage temperature
electrostatic discharge voltage on
pins HV, +LVS, ? LVS, EXTDR, FSL,
DC value
transient at t < 0.1 μ s
DC value
transient at t < 0.1 μ s
DC value
transient at t < 0.1 μ s
DC value
transient at t < 0.1 μ s
repetitive
note 1
0
0
0
0
0
0
0
0
0
? 40
? 40
? 55
?
V DD
17
V DD
17
V DD
17
V DD
17
4
+150
+150
+150
900
V
V
V
V
V
V
V
V
V/ns
° C
° C
° C
V
GHL, SHL, SHR, GHR and FSR
Note
1. In accordance with the Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 k ?
series resistor.
2005 Mar 24
8
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